Language
High-power IGBT Assembly
Technology
IGBT (Insulated Gate Bipolar Transistor) is a composite fully controlled voltage-driven power semiconductor device composed of BJT (Bipolar Junction Transistor) and MOS (Insulated Gate Field Effect Transistor), which has the feature of self-turn-off.
技術特點
● High reliability bonding technology of Pb-free soft solder
● Packaging Technology of ultra-thin die
● High-reliability bonding technology for thick aluminum wire of nickel coating
● High performance Cu clip and ribbon bonding and hybrid bonding technology
● Use highly reliable green molding compound to solve the anti-delamination and anti-overflow technology.
● High-voltage and high-Current multi-die packaging technology using DBC
● High reliability power device experiment and failure analysis technology
Application Field
IGBT is widely used in industries, 4C(communications, computers, consumer electronics, automotive electronics), aerospace, defense and military industries and other traditional industries.
Package of Products
| Package | Product picture | Package | Product picture |
|---|---|---|---|
| TO-220 |  |
TO-3P |  |
| TO-263 |  |
TO-247 |  |
| TO-220F |  |
TO-264 |  |
| Package | Product picture |
|---|---|
| TO-220 | |
| TO-3P | |
| TO-263 | |
| TO-247 | |
| TO-220F | |
| TO-264 | |
